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Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage
(Elsevier Science Bv, 1995)
This work presents an attempt related to the charging behaviour of interface states to the nonideal forward bias current-voltage (I-V) and the reverse bias capacitance-voltage (C-V) characteristics of A1-nSi Schottky barrier ...