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Toplam kayıt 61, listelenen: 61-61
Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers
(Wiley-V C H Verlag Gmbh, 2007)
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...