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Raman and TEM studies of Ge nanocrystal formation in SiOx : Ge/SiOx multilayers
(Wiley-V C H Verlag Gmbh, 2007)
Alternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray ...
Embolization of high-flow craniofacial vascular malformations with onyx
(Amer Soc Neuroradiology, 2007)
BACKGROUND AND PURPOSE: Various techniques and materials have been used for the endovascular treatment of craniofacial high-flow arteriovenous vascular malformations, because their rarity precludes standardization of their ...