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dc.contributor.authorAktaş H.
dc.date.accessioned2020-06-25T15:13:14Z
dc.date.available2020-06-25T15:13:14Z
dc.date.issued2001
dc.identifier.citationAktaş, H. (2001). Double transition effect in Anderson transition. Turkish Journal of Physics, 25(5), 431 - 438.en_US
dc.identifier.issn13000101
dc.identifier.urihttps://hdl.handle.net/20.500.12587/1676
dc.description.abstractIn this work we have studied the electronic mobility ? within a completely disordered lattice system by using the strong interatomic hopping potential V(r) = (-r/a0)exp(-r/a0) for site representation of the Hamiltonian. It is shown that a metallic system of a completely disordered lattice first goes insulating and then goes back to metallic again at higher atomic density ?.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAnderson transitionen_US
dc.subjectDouble transition effecten_US
dc.titleDouble transition effect in Anderson transitionen_US
dc.typearticleen_US
dc.contributor.departmentKırıkkale Üniversitesien_US
dc.identifier.volume25en_US
dc.identifier.issue5en_US
dc.identifier.startpage431en_US
dc.identifier.endpage438en_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US


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