Agan, SedatAydınlı, Atilla2020-06-252020-06-252009closedAccess978-981-4280-35-8https://doi.org/10.1142/9789814280365_0017https://hdl.handle.net/20.500.12587/4606International Conference on Physics, Chemistry and Application of Nanostructures -- MAY 26-29, 2009 -- Minsk, RUSSIAWe have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 degrees C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and TEM.eninfo:eu-repo/semantics/closedAccessConference Object77+10.1142/9789814280365_0017WOS:000267124700017N/A