Yazar "Aydinli, A." için listeleme
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Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence
Yerci, S.; Serincan, U.; Dogan, I.; Tokay, S.; Genisel, M.; Aydinli, A.; Turan, R. (Amer Inst Physics, 2006)Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray ... -
Infrared luminescence of annealed germanosilicate layers
Tokay, M. S.; Yasar, E.; Agan, S.; Aydinli, A. (Elsevier Science Bv, 2014)In the light of growing importance of semiconductor nanocrystals for photonics, we report on the growth and characterization of annealed germanosilicate layers used for Ge nanocrystal formation. The films are grown using ... -
Low-loss as-grown germanosilicate layers for optical waveguides
Ay, F.; Aydinli, A.; Agan, S. (Amer Inst Physics, 2003)We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguide technology. The films were deposited by plasma-enhanced chemical vapor deposition technique using silane, ... -
SiGe NANOCRYSTAL FORMATION IN PECVD GROWN SiOX/Si/Ge/Si/SiOX MULTILAYERS
Agan, S.; Aydinli, A. (World Scientific Publ Co Pte Ltd, 2009)We have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray ... -
TEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayers
Agan, S.; Dana, A.; Aydinli, A. (Iop Publishing Ltd, 2006)We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were ...