dc.contributor.author | Agan, S. | |
dc.contributor.author | Aydinli, A. | |
dc.date.accessioned | 2020-06-25T17:48:59Z | |
dc.date.available | 2020-06-25T17:48:59Z | |
dc.date.issued | 2009 | |
dc.identifier.isbn | 978-981-4280-35-8 | |
dc.identifier.uri | https://doi.org/10.1142/9789814280365_0017 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12587/4606 | |
dc.description | International Conference on Physics, Chemistry and Application of Nanostructures -- MAY 26-29, 2009 -- Minsk, RUSSIA | en_US |
dc.description | WOS: 000267124700017 | en_US |
dc.description.abstract | We have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 degrees C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and TEM. | en_US |
dc.description.sponsorship | Belarusian State Univ Informat & Radioelectron, Univ Mediterranee, Nanyang Technol Univ | en_US |
dc.language.iso | eng | en_US |
dc.publisher | World Scientific Publ Co Pte Ltd | en_US |
dc.relation.isversionof | 10.1142/9789814280365_0017 | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.title | SiGe NANOCRYSTAL FORMATION IN PECVD GROWN SiOX/Si/Ge/Si/SiOX MULTILAYERS | en_US |
dc.type | conferenceObject | en_US |
dc.contributor.department | Kırıkkale Üniversitesi | en_US |
dc.identifier.startpage | 77 | en_US |
dc.identifier.endpage | + | en_US |
dc.relation.journal | Physics, Chemistry And Application Of Nanostructures | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |