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  • Küçük Resim
    Öğe
    Comparison of β-galactosidase immobilization by entrapment in and adsorption on poly(2-hydroxyethylmethacrylate) membranes
    (Royal Swedish Acad Sciences, 1996) Turut, A; Bati, B; Kokce, A; Saglam, M; Yalcin, N
    Schottky barrier height shifts depending on the interfacial layer as well as a change of the interface state charge with the forward bias while considering the presence of bulk (semiconductor) series resistance are discussed both theoretically and experimentally. It has been concluded that the barrier height shift or increase in Schottky diodes is mainly due to the potential change across the interfacial layer and the occupation of the interface states as a result of the applied forward voltage. One assumes that the barrier height is controlled by the density distribution of the interface states in equilibrium with the semiconductor and the applied voltage. In nonideal Schottky diodes, the values of the voltage drops across the interfacial layer, the depletion layer and the bulk resistance are given in terms of the bias dependent ideality factor, n, different from those in literature. These values are determined by a formula obtained for V-i and V-s by means of change of the interface charge with bias.
  • [ X ]
    Öğe
    The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes
    (E D P Sciences, 1999) Cetinkara, HA; Saglam, M; Turut, A; Yalcin, N
    A study on Au/n-Si Schottky barrier diodes (SBDs) parameters with and without thin native oxide layer fabricated on n-type Si grown by LPE (Liquid-Phase Epitaxy) technique has been made. The native oxide layer with different thicknesses on chemically cleaned Si surface was obtained by exposing the Si surfaces to clean room air before metal evaporation. The native oxide thicknesses of samples D2, D3, D4 and D5 are in the form D2 < D3 < D4 less than or equal to D5 depending on the exposing time. Id has been seen that the value of the barrier height Phi(b) Of samples D2 (0.64 eV), D3 (0.66 eV), D4 (0.69 eV) and D5 (0.69 eV) increases with increasing the exposure time anti tends to that of the initial sample D1 (the initial sample, 0.74 eV), and thus also their I - V curves. Especially, the experimental results related to the exposure time of the surfaces to clean air are close in agreement with recently results reported for the HF-treated n-Si surface during initial oxidation in air. Furthermore, it has been determined experimentally that ageing of the Au contacts on the oxidized epilayer Si leads to barrier height values close to those measured for Au on chemically cleaned surfaces.