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Öğe The Effect Of Cu Doping On The Structural Properties And Electrical Resistivity Of MAPbI3 Perovskite Thin Films(Kırıkkale Üniversitesi, 2022) Korkmaz, SatiyePerovskite thin films have good power conversion efficiency because they have high carrier mobility and a long carrier lifetime. As a result of the research, the yield of perovskite materials has recently reached a maximum efficiency of 31% in the laboratory environment. To investigate the effects of doping on perovskite thin films' structural, surface, and electrical resistivity, structural properties of undoped and 10% Cu-doped perovskite thin films were characterized with XRD, FESEM, EDX, and AFM. Their electrical measurements are carried out using four-point probe method. The resistivity of undoped and 10% Cu-doped perovskite thin films decreased asymptotically with voltage increase.
