Plasma enhanced chemical vapor deposition of low loss as-grown germanosilicate layers for optical waveguides

dc.contributor.authorAy, Feridun
dc.contributor.authorAgan, Sedat
dc.contributor.authorAydinli, Atilla
dc.date.accessioned2020-06-25T15:13:21Z
dc.date.available2020-06-25T15:13:21Z
dc.date.issued2004
dc.departmentKırıkkale Üniversitesi
dc.descriptionSPIE - The International Society for Optical Engineering
dc.descriptionIntegrated Optics and Photonic Integrated Circuits -- 27 April 2004 through 29 April 2004 -- Strasbourg -- 64220
dc.description.abstractWe report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43 ×1022 cm -3 down to below 0.06x 1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 seem. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE loss rates at ?=632.8 nm were found to increase from are 0.20 ± 0.02 to 6.46 ± 0.04 dB/cm as the germane flow rate increased from 5 to 50 seem, respectively. In contrast, the propagation loss values for TE polarization at ?-1550 nm were found to decrease from 0.32 ± 0.03 down to 0.14 ± 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.en_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1117/12.546080
dc.identifier.endpage517en_US
dc.identifier.issn0277786X
dc.identifier.scopus2-s2.0-12444302232
dc.identifier.scopusqualityQ4
dc.identifier.startpage511en_US
dc.identifier.urihttps://doi.org/10.1117/12.546080
dc.identifier.urihttps://hdl.handle.net/20.500.12587/1751
dc.identifier.volume5451en_US
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectFTIRen_US
dc.subjectGermanosilicateen_US
dc.subjectOptical lossen_US
dc.subjectOptical waveguidesen_US
dc.subjectPECVDen_US
dc.subjectPrism couplingen_US
dc.titlePlasma enhanced chemical vapor deposition of low loss as-grown germanosilicate layers for optical waveguidesen_US
dc.typeConference Object

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