Modification of electronic structure, magnetic structure, and topological phase of bismuthene by point defects
Yükleniyor...
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Physical Soc
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
This paper reveals how the electronic structure, magnetic structure, and topological phase of two-dimensional (2D), single-layer structures of bismuth are modified by point defects. We first showed that a free-standing, single-layer, hexagonal structure of bismuth, named h-bismuthene, exhibits nontrivial band topology. We then investigated interactions between single foreign adatoms and bismuthene structures, which comprise stability, bonding, electronic structure, and magnetic structures. Localized states in diverse locations of the band gap and resonant states in band continua of bismuthene are induced upon the adsorption of different adatoms, which modify electronic and magnetic properties. Specific adatoms result in reconstruction around the adsorption site. Single vacancies and divacancies can form readily in bismuthene structures and remain stable at high temperatures. Through rebondings, Stone-Whales-type defects are constructed by divacancies, which transform into a large hole at high temperature. Like adsorbed adatoms, vacancies induce also localized gap states, which can be eliminated through rebondings in divacancies. We also showed that not only the optical and magnetic properties, but also the topological features of pristine h-bismuthene can be modified by point defects. The modification of the topological features depends on the energies of localized states and also on the strength of coupling between point defects.
Açıklama
Akturk, Ethem/0000-0002-1615-7841; Demirci, Salih/0000-0002-1272-9603
Anahtar Kelimeler
Kaynak
Physical Review B
WoS Q DeÄŸeri
Q2
Scopus Q DeÄŸeri
Cilt
96
Sayı
24
Künye
KadioÄŸlu, Y., Kilic, S.B., Demirci, S., Akturk, O.U., Akturk, E., & Ciraci, S. (2017). Modification of electronic structure, magnetic structure, and topological phase of bismuthene by point defects. Physical Review B, 96, 245424.
