Hydrogenated Carbon Monolayer in Biphenylene Network Offers a Potential Paradigm for Nanoelectronic Devices

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dc.authoridCallioglu, Safak/0000-0002-7491-2497
dc.authoridBARTH, JV/0000-0002-6270-2150
dc.authoridOzcelik, Veli Ongun/0000-0003-0645-7231
dc.authoridakturk, ethem/0000-0002-1615-7841
dc.authoridDemirci, Salih/0000-0002-1272-9603
dc.authoridGorkan, Taylan/0000-0003-0411-3734
dc.contributor.authorDemirci, Salih
dc.contributor.authorGorkan, Taylan
dc.contributor.authorCallioglu, Safak
dc.contributor.authorOzcelik, V. Ongun
dc.contributor.authorBarth, Johannes, V
dc.contributor.authorAktuerk, Ethem
dc.contributor.authorCiraci, Salim
dc.date.accessioned2025-01-21T16:41:39Z
dc.date.available2025-01-21T16:41:39Z
dc.date.issued2022
dc.departmentKırıkkale Üniversitesi
dc.description.abstractA metallic carbon monolayer in the biphenylene network (specified as C ohs) becomes an insulator upon hydrogenation (specified as CH ohs). Patterned dehydrogenation of this CH ohs can offer a variety of intriguing functionalities. Composite structures constituted by alternating stripes of C and CH ohs with different repeat periodicity and chirality display topological properties and can form heterostructures with a tunable band-lineup or Schottky barrier height. Alternating arrangements of these stripes of finite size enable one to also construct double barrier resonant tunneling structures and 2D, lateral nanocapacitors with high gravimetric capacitance for an efficient energy storage device. By controlled removal of H atom from a specific site or dehydrogenation of an extended zone, one can achieve antidoping or construct OD quantum structures like antidots, antirings/loops, and supercrystals, the energy level spacing of which can be controlled with their geometry and size for optoelectronic applications. Conversely, all these device functions can be acquired also by controlled hydrogenation of a bare C ohs monolayer. Since all these processes are applied to a monolayer, the commensurability of electronically different materials is assured. These features pertain not only to CH ohs but also to fully hydrogenated Si ohs.
dc.description.sponsorshipAcademy of Science of Turkey; Alexander von Humboldt Foundation; Scientific and Technological Research Council of Tur k e y (TUBITAK) [2214]; BAGEP Award of the Science Academy; Scientific Research Projects Coordination Unit of KIrkkale University [5004132016, 2022/003, 2022/004]; TUBIT A K ULAKBIM; High Performance and Grid Computing Center (TR-Grid e-Infrastructure); Leibniz Supercomputing Centre
dc.description.sponsorshipS.C. thanks TU?BA, The Academy of Science of Turkey for the financial support. E.A . acknowledges the Alexander von Humboldt Foundation for a Research Fellowship for Experienced Researchers. T.G. was supported by the Scientific and Technological Research Council of Tur k e y (TUBITAK) under the 2214 scholarship. V.O.O. was supported by the BAGEP Award of the Science Academy. Computations were performed at the National Center for High-Performance Computing of Turkey (UHeM) under Grant No. 5004132016 and under Project Numbers 2022/003 and 2022/004 by the Scientific Research Projects Coordination Unit of KIrkkale University, TUBIT A K ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure) , and the Leibniz Supercomputing Centre.
dc.identifier.doi10.1021/acs.jpcc.2c04453
dc.identifier.endpage15500
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.issue36
dc.identifier.startpage15491
dc.identifier.urihttps://doi.org/10.1021/acs.jpcc.2c04453
dc.identifier.urihttps://hdl.handle.net/20.500.12587/24904
dc.identifier.volume126
dc.identifier.wosWOS:000850672100001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherAmer Chemical Soc
dc.relation.ispartofJournal of Physical Chemistry C
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.snmzKA_20241229
dc.titleHydrogenated Carbon Monolayer in Biphenylene Network Offers a Potential Paradigm for Nanoelectronic Devices
dc.typeArticle

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