SiGe Nanocrystal Formation In Pecvd Grown SiOX/Si/Ge/Si/SiOX Multilayers
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Tarih
2009
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
World Scientific Publ Co Pte Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 degrees C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and TEM.
Açıklama
International Conference on Physics, Chemistry and Application of Nanostructures -- MAY 26-29, 2009 -- Minsk, RUSSIA
Anahtar Kelimeler
Kaynak
Physics, Chemistry And Application Of Nanostructures
WoS Q Değeri
N/A
Scopus Q Değeri
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Sayı
Künye
closedAccess
