SiGe Nanocrystal Formation In Pecvd Grown SiOX/Si/Ge/Si/SiOX Multilayers

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dc.contributor.authorAgan, Sedat
dc.contributor.authorAydınlı, Atilla
dc.date.accessioned2020-06-25T17:48:59Z
dc.date.available2020-06-25T17:48:59Z
dc.date.issued2009
dc.departmentKırıkkale Üniversitesi
dc.descriptionInternational Conference on Physics, Chemistry and Application of Nanostructures -- MAY 26-29, 2009 -- Minsk, RUSSIA
dc.description.abstractWe have studied alternating germanium-silicon-silicon oxide layers of 41 nm thickness grown on Si substrates by plasma enhanced chemically vapor deposition. The compositions of the grown films were determined by X-ray photoelectron spectroscopy. The films were annealed at temperatures varying from 700 to 950 degrees C for 7.5 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and TEM.en_US
dc.description.sponsorshipBelarusian State Univ Informat & Radioelectron, Univ Mediterranee, Nanyang Technol Univen_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1142/9789814280365_0017
dc.identifier.endpage+en_US
dc.identifier.isbn978-981-4280-35-8
dc.identifier.startpage77en_US
dc.identifier.urihttps://doi.org/10.1142/9789814280365_0017
dc.identifier.urihttps://hdl.handle.net/20.500.12587/4606
dc.identifier.wosWOS:000267124700017
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherWorld Scientific Publ Co Pte Ltden_US
dc.relation.ispartofPhysics, Chemistry And Application Of Nanostructures
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSiGe Nanocrystal Formation In Pecvd Grown SiOX/Si/Ge/Si/SiOX Multilayersen_US
dc.typeConference Object

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