The effect of exposure time to clean room air on characteristic parameters of Au/Epilayer n-Si Schottky diodes

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dc.contributor.authorSağlam, M.
dc.contributor.authorNuhoğlu, Ç.
dc.contributor.authorAyyıldız, E.
dc.contributor.authorTürüt, A.
dc.contributor.authorÇetinkara, H. A.
dc.date.accessioned2020-06-25T14:47:03Z
dc.date.available2020-06-25T14:47:03Z
dc.date.issued1998
dc.departmentKırıkkale Üniversitesi
dc.description.abstractA study has been made on determination and comparison of current-voltage (I-V) and capacitance-voltage (C-V) characteristics parameters of Au/n-Si Schottky barrier diodes (SBDs) with and without thin native oxide layer fabricated on n-type Si grown by LPE (Liquid-phase Epitaxy) technique. The native oxide layer with different thicknesses on chemically cleaned on Si surface were obtained by exposing the surfaces to clean room air before evaporating metal. The native oxide thicknesses of samples D2, D3, D4 and D5 are in the form D2 < D3 < D4 \leq D5, depending on the exposing time. It has been seen that the values of barrier height Fb of samples D2(0.64 eV), D3(0.66 eV), D4(0.69 eV) and D5(0.69 eV) with the interfacial layer increased with increasing the exposure time and tended to that of the initial sample D1 (nonoxidezed sample, 0.74 eV), and thus also their I-V and C-V curves. The reverse current of sample D1 showed slight nonsaturating behavior. This ''soft'' behavior has been ascribed to the spatial inhomogeneity in the barrier heights at the MS interface. In particular, reverse bias curves of samples D2, D3, D4 and D5 have shown excellent saturation which may be attributed to the passivation of the semiconductor surface states by the native oxide layer which reduces the penetration of the wave functions of electron in the metal into the semiconductor. Especially, the I-V characteristics and experimental parameters of our devices are in agreement with recently reported results revealed by the pulsed surface photovoltage technique for the electronic properties of the HF-treated Si surface during initial oxidation in air.en_US
dc.identifier.citationSağlam, M., Nuhoğlu, Ç., Ayyıldız, E., Türüt, A., Çetinkara, H. A. (1998). The effect of exposure time to clean room air on characteristic parameters of Au/Epilayer n-Si Schottky diodes. Turkish Journal of Physics, 22(5), 377 - 387.en_US
dc.identifier.endpage387en_US
dc.identifier.issn1300-0101
dc.identifier.issn1303-6122
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-17944387645
dc.identifier.scopusqualityQ2
dc.identifier.startpage377en_US
dc.identifier.trdizinid81891
dc.identifier.urihttps://app.trdizin.gov.tr/publication/paper/detail/T0RFNE9URXg=
dc.identifier.urihttps://hdl.handle.net/20.500.12587/1547
dc.identifier.volume22en_US
dc.indekslendigikaynakScopus
dc.indekslendigikaynakTR-Dizin
dc.language.isoen
dc.relation.ispartofTurkish Journal of Physics
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFizik, Uygulamalıen_US
dc.titleThe effect of exposure time to clean room air on characteristic parameters of Au/Epilayer n-Si Schottky diodesen_US
dc.typeArticle

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