Raman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayers

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dc.contributor.authorDana, A.
dc.contributor.authorAgan, S.
dc.contributor.authorTokay, S.
dc.contributor.authorAydinh, A.
dc.contributor.authorFinstad, T. G.
dc.date.accessioned2020-06-25T17:44:08Z
dc.date.available2020-06-25T17:44:08Z
dc.date.issued2007
dc.descriptionInternational Conference on Superlattices, Nano-Structures and Nano-Devices -- JUL 30-AUG 04, 2006 -- Istanbul, TURKEY
dc.descriptionFinstad, Terje/0000-0003-1293-3126
dc.description.abstractAlternating germanosilicate-siliconoxide layers of 10-30 nm thickness were grown on Si substrates by plasma enhanced chemically vapor deposition (PECVD). The compositions of the grown films were determined by X-ray photoelectron spectroscopy measurements. The films were annealed at temperatures varying from 670 to 1000 degrees C for 5 to 45 minutes under nitrogen atmosphere. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive X-ray analysis (EDAX) data confirm presence of Ge nanocrystals in each layer. The effect of annealing on the Ge nanocrystal formation in multilayers was investigated by Raman spectroscopy and Transmission Electron Microscopy (TEM). As the annealing temperature is raised to 850 degrees C, single layer of Ge nanocrystals observed at lower annealing temperatures is transformed into a double layer with the smaller sized nanocrystals closer to the substrate SiO2 interface. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.description.sponsorshipEuropean FP6European Union (EU) [505285]; TUBITAKTurkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [TBAG-U/85(103T115)]en_US
dc.description.sponsorshipThis work is a supported by European FP6 project SEMINANO with the contract number 505285 and by TUBITAK under contract TBAG-U/85(103T115). We gratefully acknowledge Prof. S. Suzer of Bilkent University, Chemistry Department for the XPS measurementsen_US
dc.identifier.citationDana, A., Agan, S., Tokay, S., Aydinh, A. ve Finstad, T. G. (2007). Raman and TEM studies of Ge nanocrystal formation in SiOx : Ge/SiOx multilayers. içinde, 4(2)288-291. doi:10.1002/pssc.200673233en_US
dc.identifier.doi10.1002/pssc.200673233
dc.identifier.endpage+en_US
dc.identifier.issn1862-6351
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-50049107430
dc.identifier.scopusqualityN/A
dc.identifier.startpage288en_US
dc.identifier.urihttps://doi.org10.1002/pssc.200673233
dc.identifier.urihttps://hdl.handle.net/20.500.12587/4020
dc.identifier.volume4en_US
dc.identifier.wosWOS:000245877200016
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.relation.ispartofPhysica Status Solidi C - Current Topics In Solid State Physics, Vol 4, No 2
dc.relation.ispartofseriesPhysica Status Solidi C-Current Topics in Solid State Physics
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleRaman and TEM studies of Ge nanocrystal formation in SiOx: Ge/SiOx multilayersen_US
dc.typeConference Object

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