The effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodes

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dc.contributor.authorCetinkara, HA
dc.contributor.authorSaglam, M
dc.contributor.authorTurut, A
dc.contributor.authorYalcin, N
dc.date.accessioned2020-06-25T17:34:39Z
dc.date.available2020-06-25T17:34:39Z
dc.date.issued1999
dc.departmentKırıkkale Üniversitesi
dc.description.abstractA study on Au/n-Si Schottky barrier diodes (SBDs) parameters with and without thin native oxide layer fabricated on n-type Si grown by LPE (Liquid-Phase Epitaxy) technique has been made. The native oxide layer with different thicknesses on chemically cleaned Si surface was obtained by exposing the Si surfaces to clean room air before metal evaporation. The native oxide thicknesses of samples D2, D3, D4 and D5 are in the form D2 < D3 < D4 less than or equal to D5 depending on the exposing time. Id has been seen that the value of the barrier height Phi(b) Of samples D2 (0.64 eV), D3 (0.66 eV), D4 (0.69 eV) and D5 (0.69 eV) increases with increasing the exposure time anti tends to that of the initial sample D1 (the initial sample, 0.74 eV), and thus also their I - V curves. Especially, the experimental results related to the exposure time of the surfaces to clean air are close in agreement with recently results reported for the HF-treated n-Si surface during initial oxidation in air. Furthermore, it has been determined experimentally that ageing of the Au contacts on the oxidized epilayer Si leads to barrier height values close to those measured for Au on chemically cleaned surfaces.en_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1051/epjap:1999156
dc.identifier.endpage94en_US
dc.identifier.issn1286-0042
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-0038416321
dc.identifier.scopusqualityQ3
dc.identifier.startpage89en_US
dc.identifier.urihttps://doi.org/10.1051/epjap:1999156
dc.identifier.urihttps://hdl.handle.net/20.500.12587/2827
dc.identifier.volume6en_US
dc.identifier.wosWOS:000080666000012
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherE D P Sciencesen_US
dc.relation.ispartofEuropean Physical Journal-Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe effects of the time-dependent and exposure time to air on Au epilayer n-Si Schottky diodesen_US
dc.typeArticle

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