Phonon-drag thermopower in Si:B and Si:Sb ?-doped samples
[ X ]
Date
2000
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
IOP, Bristol, United Kingdom
Access Rights
info:eu-repo/semantics/closedAccess
Abstract
The thermal conductivity and the thermoelectric power of two dimensional hole and electron gases in B and Sb delta-doped Si structures have been measured for the first time. The temperature range was 1.4 K to 30 K, and carrier sheet densities were in the range 0.3 to 1.0 × 1014 cm-2. Kohn anomalies have been observed in all samples. The thermopower is dominated by the phonon drag contribution in each case. Calculations of the temperature dependence of the thermopower agree with experimental data when unscreened phonon scattering potentials are used for Si:B and Si:Sb.
Description
Keywords
Journal or Series
Semiconductor Science and Technology
WoS Q Value
Scopus Q Value
Q2
Volume
15
Issue
6
