Phonon-drag thermopower in Si:B and Si:Sb ?-doped samples

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dc.contributor.authorAgan S.
dc.contributor.authorMironov O.A.
dc.contributor.authorParker E.H.C.
dc.contributor.authorWhall T.E.
dc.date.accessioned2020-06-25T15:13:11Z
dc.date.available2020-06-25T15:13:11Z
dc.date.issued2000
dc.departmentKırıkkale Üniversitesi
dc.description.abstractThe thermal conductivity and the thermoelectric power of two dimensional hole and electron gases in B and Sb delta-doped Si structures have been measured for the first time. The temperature range was 1.4 K to 30 K, and carrier sheet densities were in the range 0.3 to 1.0 × 1014 cm-2. Kohn anomalies have been observed in all samples. The thermopower is dominated by the phonon drag contribution in each case. Calculations of the temperature dependence of the thermopower agree with experimental data when unscreened phonon scattering potentials are used for Si:B and Si:Sb.en_US
dc.identifier.doi10.1088/0268-1242/15/6/311
dc.identifier.endpage556en_US
dc.identifier.issn02681242
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-0033715382
dc.identifier.scopusqualityQ2
dc.identifier.startpage551en_US
dc.identifier.urihttps://doi.org/10.1088/0268-1242/15/6/311
dc.identifier.urihttps://hdl.handle.net/20.500.12587/1643
dc.identifier.volume15en_US
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIOP, Bristol, United Kingdomen_US
dc.relation.ispartofSemiconductor Science and Technology
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titlePhonon-drag thermopower in Si:B and Si:Sb ?-doped samplesen_US
dc.typeArticle

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