Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

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dc.contributor.authorYerci, Selçuk
dc.contributor.authorSerincan, Uğur
dc.contributor.authorDogan, İlker
dc.contributor.authorTokay, Serkan
dc.contributor.authorGenisel, Mucip
dc.contributor.authorAydınlı, Atilla
dc.contributor.authorTuran, R.
dc.date.accessioned2020-06-25T17:41:25Z
dc.date.available2020-06-25T17:41:25Z
dc.date.issued2006
dc.descriptionYerci, Selcuk/0000-0003-0599-588X; Serincan, Ugur/0000-0002-6305-4343; Serincan, Ugur/0000-0002-6305-4343; Dogan, Ilker/0000-0003-4245-787X
dc.description.abstractSilicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix. (c) 2006 American Institute of Physics.en_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1063/1.2355543
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue7en_US
dc.identifier.scopus2-s2.0-33750025903
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org10.1063/1.2355543
dc.identifier.urihttps://hdl.handle.net/20.500.12587/3710
dc.identifier.volume100en_US
dc.identifier.wosWOS:000241248000070
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherAmer Inst Physicsen_US
dc.relation.ispartofJournal Of Applied Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleFormation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescenceen_US
dc.typeArticle

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