Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films
dc.contributor.author | Bacaksız, E. | |
dc.contributor.author | Basol, B. M. | |
dc.contributor.author | Altunbaş, M. | |
dc.contributor.author | Novruzov, V. | |
dc.contributor.author | Yanmaz, E. | |
dc.contributor.author | Nezir, S. | |
dc.date.accessioned | 2020-06-25T17:44:01Z | |
dc.date.available | 2020-06-25T17:44:01Z | |
dc.date.issued | 2007 | |
dc.description | Basol, Bulent/0000-0002-7691-1113 | |
dc.description.abstract | The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 degrees C and - 73 degrees C. However, CdTe films produced at a substrate temperature of 27 degrees C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 degrees C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 degrees C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 degrees C coincided with an onset of a degree of randomization in the originally strong (I 11) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 degrees C and a band gap value in the range of 1.46-1.49 eV Resistivity measurements indicated that annealing at 400 degrees C in air forms a highly resistive compensated CdTe film. All results point to 400 degrees C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change. (c) 2006 Elsevier B.V. All rights reserved. | en_US |
dc.identifier.citation | closedAccess | en_US |
dc.identifier.doi | 10.1016/j.tsf.2006.08.026 | |
dc.identifier.endpage | 3084 | en_US |
dc.identifier.issn | 0040-6090 | |
dc.identifier.issue | 5 | en_US |
dc.identifier.scopus | 2-s2.0-33845953989 | |
dc.identifier.scopusquality | Q2 | |
dc.identifier.startpage | 3079 | en_US |
dc.identifier.uri | https://doi.org10.1016/j.tsf.2006.08.026 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12587/3980 | |
dc.identifier.volume | 515 | en_US |
dc.identifier.wos | WOS:000243868900038 | |
dc.identifier.wosquality | Q1 | |
dc.indekslendigikaynak | Web of Science | |
dc.indekslendigikaynak | Scopus | |
dc.language.iso | en | |
dc.publisher | Elsevier Science Sa | en_US |
dc.relation.ispartof | Thin Solid Films | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | cadmium telluride | en_US |
dc.subject | evaporation | en_US |
dc.subject | optical properties | en_US |
dc.subject | annealing | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | scanning electorn microscopy | en_US |
dc.title | Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films | en_US |
dc.type | Article |
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