Synthesis and size differentiation of Ge nanocrystals in amorphous SiO 2

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dc.contributor.authorAğan, Sedat
dc.contributor.authorÇelik-Aktaş, A.
dc.contributor.authorZuo, Jian-Min
dc.contributor.authorDana, Aykutlu
dc.contributor.authorAydınlı, A.
dc.date.accessioned2020-06-25T15:13:43Z
dc.date.available2020-06-25T15:13:43Z
dc.date.issued2006
dc.departmentKırıkkale Üniversitesi
dc.description.abstractGermanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700-1010 °C for durations of 5 to 60 min. Transmission electron microscopy (TEM) was used to investigate Ge nanocrystal formation in SiO 2:Ge films. High-resolution cross section TEM images, electron energy-loss spectroscopy and energy dispersive X-ray analysis (EDX) data indicate that Ge nanocrystals are present in the amorphous silicon dioxide films. These nanocrystals are formed in two spatially separated layers with average sizes of 15 and 50 nm, respectively. EDX analysis indicates that Ge also diffuses into the Si substrate.en_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1007/s00339-005-3464-1
dc.identifier.endpage110en_US
dc.identifier.issn09478396
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-32244443321
dc.identifier.scopusqualityQ2
dc.identifier.startpage107en_US
dc.identifier.urihttps://doi.org/10.1007/s00339-005-3464-1
dc.identifier.urihttps://hdl.handle.net/20.500.12587/1907
dc.identifier.volume83en_US
dc.identifier.wosWOS:000235139500021
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.relation.ispartofApplied Physics A: Materials Science and Processing
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSynthesis and size differentiation of Ge nanocrystals in amorphous SiO 2en_US
dc.typeArticle

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