Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films
Yükleniyor...
Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Sci Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Formation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate. (C) 2006 Published by Elsevier Ltd.
Açıklama
Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting -- MAY 29-JUN 02, 2006 -- Nice, FRANCE
Anahtar Kelimeler
Raman Scattering Spectroscopy, Ge nanocrystals
Kaynak
Materials Science In Semiconductor Processing
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
9
Sayı
4-5
Künye
closedAccess
