Formation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin films

Basit Öğe Kaydı
dc.contributor.authorDana, Aykutlu
dc.contributor.authorTokay, Serkan
dc.contributor.authorAydınlı, Atilla
dc.date.accessioned2020-06-25T17:43:30Z
dc.date.available2020-06-25T17:43:30Z
dc.date.issued2006
dc.descriptionSymposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting -- MAY 29-JUN 02, 2006 -- Nice, FRANCE
dc.description.abstractFormation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate. (C) 2006 Published by Elsevier Ltd.en_US
dc.description.sponsorshipEuropean Mat Res Socen_US
dc.identifier.citationclosedAccessen_US
dc.identifier.doi10.1016/j.mssp.2006.08.073
dc.identifier.endpage852en_US
dc.identifier.issn1369-8001
dc.identifier.issue4-5en_US
dc.identifier.scopus2-s2.0-33845229978
dc.identifier.scopusqualityQ1
dc.identifier.startpage848en_US
dc.identifier.urihttps://doi.org10.1016/j.mssp.2006.08.073
dc.identifier.urihttps://hdl.handle.net/20.500.12587/3745
dc.identifier.volume9en_US
dc.identifier.wosWOS:000243574100080
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science In Semiconductor Processing
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRaman Scattering Spectroscopyen_US
dc.subjectGe nanocrystalsen_US
dc.titleFormation of Ge nanocrystals and SiGe in PECVD grown SiNx: Ge thin filmsen_US
dc.typeConference Object

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx Ge thin films.pdf
Boyut:
234.78 KB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin/Full Text
İndir

Koleksiyon

WOS İndeksli Yayınlar Koleksiyonu
Bildiri ve Sunum Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu