TEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayers
Yükleniyor...
Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 degrees C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 degrees C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 degrees C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.
Açıklama
Anahtar Kelimeler
Kaynak
Journal Of Physics-Condensed Matter
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
18
Sayı
22
Künye
Agan, S. & Dâna, A. & Aydinli, A. (2006). TEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayers. Journal of Physics: Condensed Matter. 18(229), 5037-5045. 10.1088/0953-8984/18/22/004.
