TEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayers

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dc.contributor.authorAgan, Sedat
dc.contributor.authorDana, Aykutlu
dc.contributor.authorAydınlı, A.
dc.date.accessioned2020-06-25T17:43:31Z
dc.date.available2020-06-25T17:43:31Z
dc.date.issued2006
dc.description.abstractWe investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate-oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900 degrees C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750 degrees C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850 degrees C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.en_US
dc.identifier.citationAgan, S. & Dâna, A. & Aydinli, A. (2006). TEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayers. Journal of Physics: Condensed Matter. 18(229), 5037-5045. 10.1088/0953-8984/18/22/004.en_US
dc.identifier.doi10.1088/0953-8984/18/22/004
dc.identifier.endpage5045en_US
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.issue22en_US
dc.identifier.scopus2-s2.0-33744497814
dc.identifier.scopusqualityQ2
dc.identifier.startpage5037en_US
dc.identifier.urihttps://doi.org10.1088/0953-8984/18/22/004
dc.identifier.urihttps://hdl.handle.net/20.500.12587/3763
dc.identifier.volume18en_US
dc.identifier.wosWOS:000238592500011
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.language.isoen
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofJournal Of Physics-Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleTEM studies of ge nanocrystal formation in PECVD grown SiO2 : Ge/SiO2 multilayersen_US
dc.typeArticle

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